By Dragica Vasileska (ed.)
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Extra info for Cutting Edge Nanotechnology
10) has been added to conventional drift-diffusion and/or hydrodynamic models to account for the mobility degradation due to lattice heating. There has been a discussion on the form of the heat generation term, details of which can be found in an excellent paper by Wachutka (Wachutka, 1990). Briefly, three different models are most commonly used and these include: (1) Joule Heating, (2) electron-lattice scattering and (3) the phonon model. Although these three models yield identical results in equilibrium, under non-equilibrium conditions the results of the three models can vary significantly.
We also show that in nanoscale devices, the hotspot corresponding to the peak temperature moves towards the drain end of the channel where removal of heat is more effective, and where less effect on the transport dynamics occurs underneath the gate. 1 Electro-Thermal Particle-Based Device Simulator Description As illustrated in Fig. 6, and discussed in details in Ref. , 2009), we selfconsistently couple the Monte Carlo solution of the electron Boltzmann transport equation with the energy balance equations for both optical and acoustic phonons.
The latter portions will create hot spots with quite high local temperature. The power density in the active transistor region (essentially the channel region underneath the gate) is again much higher than the average power density in a hot spot when the transistor is in the on-state. Thus, the treatment of self-heating and the realistic estimation of the power density is quite a complex problem. Sometime within the next five years, traditional CMOS technology is expected to reach limits of scaling.
Cutting Edge Nanotechnology by Dragica Vasileska (ed.)