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By Dickinson R. G.

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Deeper than the analysis depth. Eventually, the sputter etching catches up with the Ag-enriched region but the Ag signal stays below its 500 25 III Sputtering time Fig. 9. Knock-in of Ag in Al matrix. eV value due to the ongoing knocking-in of the Ag. Switching back to 500 eV (region I I I ) causes the Ag signal to rise above its previous 500 eV value because the surface advances during sputtering into the region which was previously enriched with Ag by the 2 keV bombardment. After sputtering through this region, the Ag signal goes back to its level corresponding to 500 eV bombardment.

E. excluding in profiling the crater walls) and making the scattering angle variable. The recent incorporation of a mass analyzer ( 3 M ) , thereby adding the capability for SIMS analysis, is bound to help much in the inter­ pretation of results from both methods. In general, peaks in ISS spectra are much less well-defined than in the other surface analysis methods and they ride usually on a rather noisy background. This phenomenon is probably intrinsic to ISS and is not likely to be overcome because the billiard game is played not strictly with single atoms but with an assembly of atoms in which the influence of the neighbors of the struck atom is never completely negligi­ ble [ 6 7 , 6 8 ] .

1 c m . SIMS achieves much higher sensitivities than all other surface analysis 6 techniques. 1 c m is available. Such high sensitivities pro­ vide an excellent opportunity to study ion implantation profiles, but one often observes long tails which are caused by inherent and unavoidable knock-in effects induced by the sputtering process. Morabito and Lewis [ 6 9 ] drew attention to the fact that for obtaining a desired detection sensitivity, a minimum sample volume needs to be con­ sumed and mass analyzed.

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Decomposition of Ammonia by Optically Excited Mercury Atoms by Dickinson R. G.

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